GaAs Substrate
Fa'amatalaga
Gallium Arsenide (GaAs) o se vaega taua ma matua III-Ⅴ semiconductor, e faʻaaogaina lautele i le fanua o optoelectronics ma microelectronics.GaA e masani ona vaevaeina i ni vaega se lua: semi-insulating GaAs ma N-ituaiga GaAs.O le semi-insulating GaAs e masani ona faʻaaogaina e fai ai taʻaloga faʻatasi ma MESFET, HEMT ma HBT fausaga, lea e faʻaaogaina i le radar, microwave ma le millimeter wave communications, ultra-high-speed computers and optical fiber communications.O le N-ituaiga GaA e masani ona faʻaaogaina i le LD, LED, latalata i le infrared lasers, quantum well high-power lasers and high-efficiency solar cell.
Meatotino
| tioata | Fa'atosina | Ituaiga Fa'aoso | Fa'atotonuga o tafe cm-3 | Malosi cm-2 | Metotia Tuputupu |
| GaAs | Leai | Si | / | <5×105 | LEC |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
GaAs Substrate Fa'amatalaga
O le gaAs substrate o lo'o fa'atatau i se mea fa'apipi'i e faia i mea tioata gallium arsenide (GaAs).GaAs o se semiconductor faʻapipiʻiina e aofia ai elemene gallium (Ga) ma arsenic (As).
GaAs substrates e masani ona faʻaaogaina i fanua o mea tau eletise ma optoelectronics ona o latou meatotino lelei.O nisi o mea taua o gaAs substrates e aofia ai:
1. maualuga eletise eletise: GaA e maualuga atu le eletise eletise nai lo isi mea masani semiconductor e pei o le silicon (Si).O lenei uiga e fa'aogaina ai le gaAs substrate e fetaui lelei mo masini fa'aeletonika maualuga-maualuga.
2. Va'a sa'o fa'aili: GaA o lo'o i ai se va fa'aili sa'o, o lona uiga e mafai ona fa'aosoina lelei le malamalama pe a toe tu'ufa'atasia eletise ma pu.O lenei uiga e lelei ai le gaAs substrates mo fa'aoga optoelectronic e pei o diodes moli (LED) ma lasers.
3. Vaava'a Va'ava'a: GaA e sili atu lona va'a fa'alava nai lo le silicon, e mafai ai ona fa'agaoioi i le vevela maualuga.O lenei meatotino e mafai ai e le GaAs ona faʻaogaina masini e sili atu ona lelei le faʻaogaina i siosiomaga maualuga-vevela.
4. Le pisapisao maualalo: GaAs substrates e faʻaalia le maualalo o le pisa, faʻaogaina mo le maualalo o le pisa amplifiers ma isi faʻaoga eletise maaleale.
GaAs substrates o loʻo faʻaaogaina lautele i masini faʻaeletoroni ma optoelectronic, e aofia ai transistors televave, microwave integrated circuits (ICs), photovoltaic cell, photon detectors, ma solar cell.
E mafai ona saunia nei mea'ai e fa'aaoga ai auala eseese e pei ole Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) po'o le Liquid Phase Epitaxy (LPE).Ole auala faʻapitoa ole tuputupu aʻe faʻaaogaina e faʻalagolago ile talosaga manaʻomia ma manaʻoga lelei ole gaAs substrate.
