oloa

Ge substrate

fa'amatalaga puupuu:

1.Sb/N doped

2. Leai se doping

3. Semiconductor


Fa'amatalaga Oloa

Faailoga o oloa

Fa'amatalaga

Ge tioata tasi e sili semiconductor mo Infrared ma IC alamanuia.

Meatotino

Metotia Tuputupu

Czochralski metotia

Fauga tioata

M3

Unit Cell tumau

a=5.65754 Å

Malosi (g/cm3

5.323

Lisimea (℃)

937.4

Mea fa'apipi'i

Leai se doped

Sb-doped

I / Ga –doped

Ituaiga

/

N

P

Tete'e

35Ωcm

0.05Ωcm

0.05~0.1Ωcm

EPD

<4×103∕cm2

<4×103∕cm2

<4×103∕cm2

Tele

10x3,10x5,10x10,15x15,20x15,20x20,

dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm

mafiafia

0.5mm, 1.0mm

Faila

Nofofua pe lua

Fa'atonuga tioata

<100>,<110>,<111>,±0.5º

Ra

≤5Å(5µm×5µm)

O le fa'auigaga o le substrate Ge

O le Ge substrate e faasino i se mea e fai i le elemene germanium (Ge).Germanium o se mea semiconductor faʻatasi ai ma mea faʻaeletoroni tulaga ese e faʻaogaina ai le tele o faʻaoga eletise ma optoelectronic.

Ge substrates e masani ona faʻaaogaina i le gaosiga o masini faʻaeletoroni, aemaise lava i le fanua o tekinolosi semiconductor.E faʻaaogaina e fai ma mea faʻavae mo le teuina o ata manifinifi ma epitaxial layers o isi semiconductors e pei o le silicon (Si).Ge substrates e mafai ona faʻaogaina e faʻatupuina ai heterostructures ma faʻapipiʻi vaega semiconductor faʻatasi ma mea faʻapitoa mo faʻaoga e pei o transistors maualuga-saosaoa, photodetectors, ma sela sola.

O le Germanium e faʻaaogaina foi i photonics ma optoelectronics, lea e mafai ona faʻaaogaina e fai ma mea e faʻaogaina mo le faʻatupulaia o faʻamaʻi (IR) ma tioata.Ge substrates ei ai meatotino e manaʻomia mo faʻaoga infrared, e pei o le lautele o felauaiga i totonu o le ogatotonu o le infrared ma mea faʻainisinia sili ona lelei i le maualalo o le vevela.

Ge substrates o loʻo i ai se fausaga lattice vavalalata faʻatusa i le silikoni, e faʻafetaui ai mo le tuʻufaʻatasia ma mea faʻaeletonika faʻavae Si.O lenei fesoʻotaʻiga e faʻatagaina ai le fausiaina o fausaga faʻapipiʻi ma le atinaʻeina o masini eletise ma photonic.

I le aotelega, o le Ge substrate e faʻatatau i se mea faʻapipiʻi e faia i le germanium, o se mea semiconductor faʻaaogaina i mea faʻaeletoroni ma optoelectronic.E avea o se faʻavae mo le tuputupu aʻe o isi mea semiconductor, e mafai ai ona faʻapipiʻiina masini eseese i le fanua o mea tau eletise, optoelectronics ma photonics.


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