SiC Substrate
Fa'amatalaga
Silicon carbide (SiC) o se tuufaatasiga binary o le Vaega IV-IV, na o le pau lea o le faʻamautu mautu i le Vaega IV o le Vaitaimi Vaitaimi, O se semiconductor taua.O le SiC e sili ona lelei le vevela, masini, vailaʻau ma eletise, lea e avea ai ma se tasi o mea sili ona lelei mo le faʻaogaina o le vevela, maualuga, ma le maualuga o le eletise eletise, o le SiC e mafai foi ona faʻaaogaina e fai ma mea faʻapipiʻi. mo GaN fa'avae moli moli-emitting diodes.I le taimi nei, 4H-SiC o le oloa autu i le maketi, ma o le conductivity ituaiga e vaevaeina i semi-insulating ituaiga ma N ituaiga.
Meatotino
| Aitema | 2 inisi 4H N-ituaiga | ||
| Diamita | 2 inisi (50.8mm) | ||
| mafiafia | 350+/-25um | ||
| Fa'atonuga | ese axis 4.0˚ agai i <1120> ± 0.5˚ | ||
| Primary Flat Orientation | <1-100> ± 5° | ||
| Lua Flat Fa'atonuga | 90.0˚ CW mai le Primary Flat ± 5.0˚, Si Fa'asaga i luga | ||
| Primary Flat Umi | 16 ± 2.0 | ||
| Lua Mafolafola Umi | 8 ± 2.0 | ||
| Vasega | Vasega o gaosiga (P) | Vasega su'esu'e (R) | Vasega fa'alelei (D) |
| Tete'e | 0.015~0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Micropipe Density | ≤ 1 paipa micro/cm² | ≤ 1 0micropipes/ cm² | ≤ 30 micropipe/cm² |
| Fa'asaa o luga | Si fa'asaga CMP Ra <0.5nm, C Fa'asaga Ra <1 nm | N/A, vaega fa'aoga > 75% | |
| TTV | <8 um | <10um | <15 um |
| punou | < ±8 um | < ±10um | < ±15um |
| A'ai | <15 um | <20 um | <25 um |
| Ta'eta'ei | Leai | Umi fa'aputu ≤ 3 mm | umi fa'aopoopo ≤10mm, |
| Masisi | ≤ 3 maosiosi, fa'aputu | ≤ 5 matasi, fa'aputu | ≤ 10 matasi, fa'aputu |
| Papatusi Hex | aupito maualuga 6 ipu, | aupito maualuga 12 ipu, | N/A, vaega fa'aoga > 75% |
| Polytype Areas | Leai | Vaega fa'aopoopo ≤ 5% | Vaega fa'aopoopo ≤ 10% |
| Fa'aleagaina | Leai | ||
